Plasma processing apparatus

ABSTRACT

A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.14/931,919, filed on Nov. 14, 2015, which claims priority from JapanesePatent Application No. 2014-225390 filed on Nov. 5, 2014 the disclosuresof which are incorporated herein in their entirety by reference, andpriority is claimed to each of the foregoing.

TECHNICAL FIELD

Various aspects and exemplary embodiments of the present disclosure arerelated to a plasma processing apparatus.

BACKGROUND

There is a plasma processing apparatus that uses excitation of a processgas by microwaves. The plasma processing apparatus radiates themicrowaves for plasma excitation using an antenna to dissociate gasintroduced into a processing space inside of a processing container,thereby generating plasma. Further, the plasma processing apparatusintroduces the gas into the processing space from an injection holeformed on a sidewall of the processing container. See, for example,Japanese Patent No. 5440604.

SUMMARY

A plasma processing apparatus according to one aspect of the presentdisclosure includes a processing container that defines a processingspace; a gas supply unit provided on a sidewall of the processingcontainer, the gas supply unit being configured to supply a gas to theprocessing space; a dielectric member having a facing surface that facesthe processing space, and an antenna provided on a surface opposite tothe facing surface of the dielectric member, the antenna beingconfigured to radiate microwaves that turn the gas into plasma to theprocessing space through the dielectric member. The gas supply unitincludes: a transport hole configured to transport the gas to a positionwhere the gas does not reach the processing space in the inside of thesidewall of the processing container, and an injection hole communicatedto the transport hole and configured to inject the gas transported tothe position into the processing space, the injection hole having adiameter larger than that of the transport hole.

The foregoing summary is illustrative only and is not intended to be inany way limiting. In addition to the illustrative aspects, exemplaryembodiments, and features described above, further aspects, exemplaryembodiments, and features will become apparent by reference to thedrawings and the following detailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view illustrating a main part of aplasma processing apparatus according to a first exemplary embodiment.

FIG. 2 is a schematic cross-sectional view illustrating the vicinity ofa coaxial waveguide provided in the plasma processing apparatusillustrated in FIG. 1 in an enlarged scale.

FIG. 3 is a view illustrating a slot antenna plate provided in theplasma processing apparatus illustrated in FIG. 1 when viewed from adirection indicated by arrow III of FIG. 1.

FIG. 4 is a cross-sectional view of the coaxial waveguide provided inthe plasma processing apparatus illustrated in FIG. 1 when cutting alongline IV-IV of FIG. 2.

FIG. 5 is an enlarged cross-sectional view of a gas supply unit and aside wall of a processing container in the first exemplary embodiment.

FIG. 6 is a graph representing a relationship between a pressure of gasand an electric field intensity that generates electric discharge.

FIG. 7 is a graph representing an example of simulation results of arelationship between a pressure of gas in the injection hole and aposition inside a sidewall of a processing container in the firstexemplary embodiment.

FIG. 8 is a graph representing an example of simulation results of arelationship between a pressure of gas in the injection hole and aposition inside the sidewall of the processing container in the firstexemplary embodiment.

FIG. 9 is a graph representing an example of simulation results of arelationship between a diameter of the injection hole and a leakage rateof microwaves in the first exemplary embodiment.

FIG. 10 is an enlarged cross-sectional view of a gas supply unit, asidewall of a processing container, and a cylindrical dielectric in asecond exemplary embodiment.

FIG. 11 is a front view of the gas supply unit, the sidewall of theprocessing container, and the cylindrical dielectric illustrated in FIG.10 when viewed from one end side of the cylindrical dielectric.

FIG. 12 is a graph representing an example of simulation results of anelectric field intensity of an injection hole depending on whether thecylindrical dielectric is present or not in the second exemplaryembodiment.

FIG. 13 is an enlarged cross-sectional view of a gas supply unit, asidewall of a processing container, and a plate-shaped dielectric in athird exemplary embodiment.

FIG. 14 is an enlarged cross-sectional view of a gas supply unit, asidewall of a processing container, and a plate-shaped conductor in afourth exemplary embodiment.

FIG. 15 illustrates graphs representing examples of simulation resultsof the electric field intensity of the injection hole depending onwhether the plate-shaped dielectric in the third exemplary embodiment orthe plate-shaped conductor in the fourth exemplary embodiment is presentor not.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which form a part hereof. The illustrativeembodiments described in the detailed description, drawing, and claimsare not meant to be limiting. Other exemplary embodiments may beutilized, and other changes may be made without departing from thespirit or scope of the subject matter presented here.

In the related art described above, there is a problem in that in a casewhere a pressure increases in the injection hole, electric discharge maybe generated in the injection hole or in the vicinity of the hole due tothe pressure increase.

A plasma processing apparatus according to one aspect of the presentdisclosure includes a processing container that defines a processingspace; a gas supply unit provided on a sidewall of the processingcontainer, the gas supply unit being configured to supply a gas to theprocessing space; a dielectric member having a facing surface that facesthe processing space, and an antenna provided on a surface opposite tothe facing surface of the dielectric member, the antenna beingconfigured to radiate microwaves that turn the gas into plasma to theprocessing space through the dielectric member. The gas supply unitincludes: a transport hole configured to transport the gas to a positionwhere the gas does not reach the processing space in the inside of thesidewall of the processing container, and an injection hole communicatedto the transport hole and configured to inject the gas transported tothe position into the processing space, the injection hole having adiameter larger than that of the transport hole.

In the plasma processing apparatus, the diameter of the injection holeis smaller than a predetermined upper limit value, and the predeterminedupper limit value is determined using the following Equation (1):

a<Pnm/(2ηf(με)^(1/2))  (1)

in which “a” is a radius of the injection hole (the predetermined upperlimit value/2), “Pnm” is a Bessel function, “f” is a frequency ofmicrowaves, “μ” is a permeability, and “ε” is a dielectric constant.

In the plasma processing apparatus, the diameter of the injection holeis increased as going away from the transport hole.

The plasma processing apparatus further includes a cylindricaldielectric embedded in the sidewall of the processing container tosurround a periphery of the injection hole in a state where one endthereof is exposed to the processing space. The cylindrical dielectricis configured to guide the microwaves radiated into the processing spaceby the antenna from one end to the other end.

The plasma processing apparatus further includes a plate-shapeddielectric embedded in an area interposed between the injection hole andthe dielectric member of the sidewall of the processing container in astate where one end thereof is exposed to the processing space. Theplate-shaped dielectric being configured to guide the microwavesradiated into the processing space by the antenna from one end to theother end.

In the plasma processing apparatus, assuming that a wavelength of themicrowaves propagated in the inside of the cylindrical dielectric or theplate-shaped dielectric is λ, a length from one end to the other end inthe cylindrical dielectric or the plate-shaped dielectric is λ/5 or moreand 3λ/5 or less.

The plasma processing apparatus further includes a plate-shapedconductor provided to protrude from the area interposed between theinjection hole and the dielectric member of the sidewall of theprocessing container toward the processing space, the plate-shapedconductor being configured to shield the microwaves radiated into theprocessing space by the antenna.

According to various aspects and exemplary embodiments of the presentdisclosure, a plasma processing apparatus capable of introducing gaswithout generating electric discharge is realized.

Hereinafter, various exemplary embodiments will be described withreference to the accompanying drawings in detail. In the meantime, thesame or corresponding portions in the respective drawings will beassigned the same reference numerals.

First Exemplary Embodiment

FIG. 1 is a schematic cross-sectional view illustrating a main part of aplasma processing apparatus according to a first exemplary embodiment.FIG. 2 is a schematic cross-sectional view illustrating the vicinity ofa coaxial waveguide provided in the plasma processing apparatusillustrated in FIG. 1 in an enlarged scale. FIG. 3 is a viewillustrating a slot antenna plate provided in the plasma processingapparatus illustrated in FIG. 1 when viewed from a direction indicatedby arrow III of FIG. 1. FIG. 4 is a cross-sectional view of the coaxialwaveguide provided in the plasma processing apparatus illustrated inFIG. 1 when cutting along line IV-IV of FIG. 2. In the meantime, thevertical direction of the paper sheet is defined as a vertical directionof the plasma processing apparatus in FIGS. 1 and 2. Further, in thepresent specification, a diametric direction refers to a direction thatis directed from an inner conductor included in the coaxial waveguidetoward an outer conductor in FIG. 4.

A plasma processing apparatus 11 illustrated in FIGS. 1 and 2 includes aprocessing container 12, a gas supply unit 13, a holding stand 14, amicrowave generator 15, a dielectric member 16, an antenna 20, and acoaxial waveguide 31.

The upper side of the processing container 12 is opened and a processingspace S for performing a plasma processing on a substrate to beprocessed (“processing target substrate”) W is defined inside theprocessing container 12. The processing container 12 includes a bottompart 21 positioned at the lower side of the holding stand 14 and asidewall 22 extending upwardly from an outer peripheral portion of thebottom part 21. The sidewall 22 has a cylindrical shape. An exhaust hole23 for exhausting gas is formed at the central portion of the bottompart 21 of the processing container 12 in the diametric direction. Theupper side of the processing container 12 is opened, and the processingcontainer 12 may be sealed by the dielectric member 16 disposed on theupper side of the processing container 12 and an O ring 24 interposed asa seal member between the dielectric member 16 and the processingcontainer 12. The dielectric member 16 includes a facing surface 16 athat faces the processing space S. The dielectric member 16 is made of adielectric. A specific material of the dielectric member 16 may be, forexample, quartz or alumina.

The gas supply unit 13 supplies a gas for plasma excitation and a gasfor plasma processing into the processing container 12. A portion of thegas supply unit 13 is provided to be embedded in the sidewall 22 andsupplies the gas from the outside of the processing container 12 intothe processing space S inside the processing container 12. In themeantime, a detailed configuration of the gas supply unit 13 will bedescribed later.

The holding stand 14 is disposed within the processing container 12 andholds the processing target substrate W.

The microwave generator 15 is disposed outside the processing container12 and generates microwaves for plasma excitation. Further, in the firstexemplary embodiment, the plasma processing apparatus 11 includes awaveguide 39 of which one end portion is connected to the microwavegenerator 15, and a mode converter 40 that converts a mode of themicrowaves. The waveguide 39 is provided to extend in a horizontaldirection, specifically, a left and right direction on the paper sheetof FIG. 1. In the meantime, a waveguide having a circular cross-sectionor a rectangular cross-section is used as the waveguide 39.

The antenna 20 is provided on the surface 16 b opposite to the facingsurface 16 a of the dielectric member 16 and radiates the microwaves forplasma generation into the processing space S through the dielectricmember 16 based on the microwaves generated by the microwave generator15. The antenna 20 includes a slot antenna plate 18 and a slow waveplate 19.

The slot antenna plate 18 is a thin plate-shaped member that is disposedon the surface 16 b opposite to the facing surface 16 a of thedielectric member 16 and radiates microwaves onto the dielectric member16. Each of the opposite surfaces of the slot antenna plate 18 in theplate thickness direction is flat. In the slot antenna plate 18, asillustrated in FIG. 3, a plurality of slot holes 17 are formed throughthe slot antenna plate 18 in the plate thickness direction. Each of theslot holes 17 is configured such that two rectangular openings form onepair and are arranged in a substantially T shape. The formed slot holes17 are generally divided into a group of inner circumferential side slotholes 26 a arranged at the inner circumferential side and a group ofouter circumferential side slot holes 26 b arranged at the outercircumferential side. The group of inner circumferential side slot holes26 a refers to eight slot holes 17 formed within a range surrounded by adotted line in FIG. 3. The group of outer circumferential side slotholes 26 b refers to sixteen slot holes 17 formed within a rangesurrounded by a dashed line of FIG. 3. In the group of innercircumferential side slot holes 26 a, the eight slot holes 17 areannularly arranged at regular intervals. In the group of outercircumferential side slot holes 26 b, the sixteen slot holes 17 areannularly arranged at regular intervals. The slot antenna plate 18 has arotational symmetry property about a center 28 in the diametricdirection and has the same shape, for example, even in a case of beingrotated 45° about the center 28.

The slow wave plate 19 is disposed on the slot antenna plate 18 andpropagates microwaves in the diametric direction. An opening is formedat the central portion of the slow wave plate 19 so as to dispose theinner conductor 32 included in the coaxial waveguide 31 to be describedbelow therein. An inner diameter side end portion of the slow wave plate19 forming the periphery of the opening protrudes in the plate thicknessdirection. That is, the slow wave plate 19 includes a ring-shaped slowwave plate protrusion 27 protruding from the inner diameter side endportion in the plate thickness direction. The slow wave plate 19 isattached such that the slow wave plate protrusion 27 is positioned onthe upper side thereof. The material of the slow wave plate 19 isdielectric. A specific material of the slow wave plate 19 may be, forexample, quartz or alumina. The wavelength of the microwaves propagatedin the slow wave plate 19 becomes shorter than that of the microwavespropagated in the atmosphere.

All of the dielectric member 16, the slot antenna plate 18, and the slowwave plate 19 have a disk shape. The plasma processing apparatus 11 ismanufactured such that the center of the dielectric member 16 in thediametric direction, the center 28 of the slot antenna plate 18 in thediametric direction, and the center of the slow wave plate 19 in thediametric direction are aligned with each other. By doing this, for themicrowaves propagated from the central side toward the outer diameterside, the propagation degrees of microwaves in the circumferentialdirection are made to be equal to each other so as to ensure theuniformity of plasma generated below the dielectric member 16, in thecircumferential direction. Here, the center 28 of the slot antenna plate18 in the diametric direction is set as a reference.

The coaxial waveguide 31 is a waveguide that supplies microwaves to theantenna 20. The coaxial waveguide 31 includes an inner conductor 32 andan outer conductor 33. The inner conductor 32 is formed to be asubstantially round rod shape. One end portion 35 of the inner conductor32 is connected to the center 28 of the slot antenna plate 18. The outerconductor 33 is provided on the outer diameter side of the innerconductor 32 with a gap 34 being interposed therebetween in thediametric direction. The outer conductor 33 is formed in a substantiallycylindrical shape. That is, the coaxial waveguide 31 is configured bycombining the inner conductor 32 and the outer conductor 33 with eachother such that the outer peripheral surface 36 of the inner conductor32 faces the inner peripheral surface 37 of the outer conductor 33. Thecoaxial waveguide 39 is provided to extend in the vertical direction ofthe paper sheet of FIG. 1. The inner conductor 32 and the outerconductor 33 are manufactured as separate bodies, respectively. Also,the inner conductor 32 and the outer conductor 33 are combined byaligning the center of the inner conductor 32 in the diametric directionwith the center of the outer conductor 33 in the diametric direction.

The microwaves generated by the microwave generator 15 are propagatedinto the antenna 20 through the waveguide 39 and the coaxial waveguide31. As the frequency of microwaves generated by the microwave generator15, for example, 2.45 GHz is selected.

For example, the TE mode microwaves of generated by the microwavegenerator 15 are propagated within the waveguide 39 to the left side ofthe paper sheet as indicated by arrow A1 of FIG. 1, and converted intothe TEM mode by the mode converter 40. Also, the microwaves convertedinto the TEM mode are propagated within the coaxial waveguide 31 to thelower side of the paper sheet as indicated by arrow A2 of FIG. 1.Specifically, the microwaves are propagated between the inner conductor32 and the outer conductor 33, where the gap 34 is formed, and betweenthe inner conductor 32 and the cooling plate protrusion 47. Themicrowaves propagated in the coaxial waveguide 31 are propagated withinthe slow wave plate 19 in the diametric direction and are radiated tothe dielectric member 16 from the plurality of slot holes 17 formed inthe slot antenna plate 18. The microwaves, which have penetrate throughthe dielectric member 16, generate an electric field just below thedielectric member 16 so as to generate plasma in the processingcontainer 12.

Further, the plasma processing apparatus 11 includes: a dielectric platepressing ring 41 that is arranged on the upper side of the opening sideupper end portion of the sidewall 22 and presses the dielectric member16 from the upper side; an antenna pressing unit 42 that is arranged onthe upper side of the dielectric plate pressing ring 41 and presses, forexample, the slot antenna plate 18 from the upper side; a cooling plate43 that is arranged on the upper side of the slow wave plate 19 andcools, for example, the slow wave plate 19; an electromagnetic shieldingelastic body 44 that is arranged to be interposed between the antennapressing unit 42 and the cooling plate 43 and shields theelectromagnetic field inside and outside the processing container 12; anouter periphery fixing ring 45 that fixes the outer peripheral portionof the slot antenna plate 18; and a center fixing plate 46 that fixesthe center of the slot antenna plate 18.

As illustrated in FIG. 2, an opening used for disposing the coaxialwaveguide 31 therein is formed at the central portion of the coolingplate 43. The inner diameter side end portion of the cooling plate 43,which forms the periphery of the opening, protrudes in the platethickness direction. That is, the cooling plate 43 includes aring-shaped cooling plate protrusion 47 that protrudes from the innerdiameter side end portion in the plate thickness direction. The coolingplate 43 is attached such that the cooling plate protrusion 47 ispositioned at the upper side.

The cylindrical outer conductor 33 is arranged on the cooling plateprotrusion 47. Accordingly, the upper end portion of the cooling plateprotrusion 47 is in contact with the lower end portion of the outerconductor 33. In this case, the inner peripheral surface 37 of the outerconductor 33 is continuous to the inner peripheral surface 50 of thecooling plate protrusion 47 and a distance between the outer peripheralsurface 36 of the inner conductor 32 and the inner peripheral surface 37of the outer conductor 33 becomes equal to a distance between the outerperipheral surface 36 of the inner conductor 32 and the inner peripheralsurface 50 of the cooling plate protrusion 47 in the diametricdirection. The inner peripheral surface 37 of the outer conductor 33 iscontinuous to the inner peripheral surface 50 of the cooling plateprotrusion 47 such that the cooling plate protrusion 47 is configured asa portion of the coaxial waveguide 31. In the meantime, the gap 34formed between the inner conductor 32 and the outer conductor 33 ispositioned above the slow wave plate protrusion 27.

Further, on the outer peripheral portion of the cooling plate 43, a slowwave plate positioning portion 48 is formed which protrudes to thedielectric member 16 in a ring shape. The slow wave plate 19 ispositioned in the diametric direction by the slow wave plate positioningportion 48. The outer periphery fixing ring 45 fixes the slot antennaplate 18 in a position in the diametric direction where the slow waveplate positioning portion 48 is formed.

In the meantime, in the central portion in the diametric direction of anupper side surface of the dielectric member 16, an accommodation recess49, which is recessed from the upper side surface of the dielectricmember 16 to reduce the plate thickness, is formed so as to accommodatethe center fixing plate 46.

Further, as illustrated in FIGS. 2 and 4, the plasma processingapparatus 11 includes a plurality of stub members 51 extendible from theouter conductor 33 side toward the inner conductor 32 side as a changingmember that changes a distance in the diametric direction between aportion of the outer peripheral surface 36 of the inner conductor 32 anda facing part that faces the portion of the outer peripheral surface ofthe inner conductor 32 in the diametric direction. In the meantime, inthe present exemplary embodiment, the facing part that faces the portionof the outer peripheral surface of the inner conductor 32 in thediametric direction corresponds to the cooling plate protrusion 47.

Each of the stub members 51 includes a rod-shaped part 52 supported atthe outer conductor 33 side and provided to extend in the diametricdirection, and a screw part 53 as a movement amount adjusting member toadjust the movement amount of the rod-shaped part 52 in the diametricdirection. The screw part 53 is provided on the outer diameter side endportion of the rod-shaped part 52.

Each of the stub members 51 is inserted into the cooling plateprotrusion 47. Specifically, in the cooling plate protrusion 47, thescrew holes 54 extending straightly in the diametric direction throughthe cooling plate protrusion 47 are formed and each of the stub members51 is inserted into the cooling plate protrusion 47 by screwing thescrew holes 54 with the screw parts 53, respectively. That is, the stubmembers 51 are supported by the screw parts 53 screwed to the screwholes 54 formed in the cooling plate protrusion 47 at the outerconductor 33 side.

By rotating the screw parts 53, the stub members 51, each including therod-shaped part 52, may be entirely moved in the diametric direction. InFIG. 2, the stub members 51 are movable in the left and right directionsof the paper sheet. Further, the movement amount of the stub members 51is adjusted by the rotational amount of the screw parts 53.

A plurality of stub members 51 (six stub members in FIG. 4) are providedwithin the cooling plate protrusion 47 at the periphery of the innerconductor 32 to be arranged at substantially equal intervals in thecircumferential direction. For example, in the case where six stubmembers are provided, six stub members 51 are arranged such that anangle between adjacent stub members becomes an interval of 60° in thecircumferential direction.

Each of the plurality of stub members 51 may independently move in thediametric direction. That is, diametric positions of tip end portions 55of the rod-shaped parts 52 included in the stub members 51 areindividually adjusted, respectively.

Next, descriptions will be made on a detailed configuration of the gassupply unit 13 illustrated in FIG. 1. FIG. 5 is an enlargedcross-sectional view of a gas supply unit and a side wall of theprocessing container in the first exemplary embodiment.

As illustrated in FIG. 5, the gas supply unit 13 includes a transporthole 13-1 and an injection hole 13-2 communicated to the transport hole13-1. The transport hole 13-1 transports the gas to a position(hereinafter, referred to as an “intermediate position”) where the gasdoes not reach the processing space S in the sidewall 22 of theprocessing container 12. The transport hole 13-1 is formed in a taperedshape in which the diameter thereof becomes smaller as a position on thetransport hole 13-1 becomes nearer to the tip end thereof. Because thetransport hole 13-1 is formed in the tapered shape, the pressure of thegas transported to the intermediate position of the sidewall 22 of theprocessing container 12 by the transport hole 13-1 is increased.

The injection hole 13-2 injects the gas transported to the intermediateposition of the sidewall 22 of the processing container 12 by thetransport hole 13-1 into the processing space S. The injection hole 13-2has a diameter larger than that of the transport hole 13-1. In theexample of FIG. 5, assuming that the diameter of a tip end portion withthe smallest diameter in the transport hole 13-1 is D1 and the diameterof the injection hole 13-2 is D2, a relationship of D1<D2 isestablished. Because the diameter of the injection hole 13-2 is largerthan the diameter of the transport hole 13-1, the pressure of the gasinjected from the injection hole 13-2 into the processing space S isreduced compared with the pressure of the gas transported by thetransport hole 13-1. Therefore, the pressure within the injection hole13-2 or the pressure in the vicinity of the injection hole 13-2 isprevented from excessively increasing.

FIG. 6 is a graph illustrating a relationship between a pressure of gasand an electric field intensity that generates electric discharge. Acurve indicated at the upper side of FIG. 6 indicates a relationshipbetween a pressure of Ar (argon) gas in a vacuum and electric fieldintensity that generates electric discharge. The curve indicated at theupper side of FIG. 6 is also referred to as the Paschen's curve. A curveindicated at the lower side of FIG. 6 indicates a relationship between apressure of Ar (argon) gas contained in plasma and electric fieldintensity that generates electric discharge. In the meantime, the curveindicated at the lower side of FIG. 6 is a curve estimated from thePaschen's curve indicated at the upper side of FIG. 6.

As is evident from the curve of FIG. 6, when the pressure of the gas isfrom 1 Torr to 10 Torr, the electric field intensity to generateelectric discharge becomes smallest. That is, the curve of FIG. 6indicates that a possibility of generation of electric discharge becomeshighest when the pressure of gas is in the range of 1 Torr to 10 Torr.As a result of intensive studies through, for example, a simulation ortest performed by the inventors of the present application, it has beenfound that electric discharge is actually generated when the pressure ofthe injected gas is in the range of 1 Torr to 2 Torr.

FIGS. 7 and 8 are graphs illustrating examples of simulation results ofa relationship between a pressure of gas in an injection hole and aposition inside a sidewall of a processing container 12 in the firstexemplary embodiment. In the graphs illustrated in FIGS. 7 and 8, thehorizontal axis indicates a distance form a predetermined referenceposition to the position inside the sidewall of the processing container12. Further, in FIGS. 7 and 8, the position of the dotted line indicatesthe intermediate position of the sidewall 22 of the processing container12 and a position located at the right of the dotted line indicates theposition corresponding to the injection hole 13-2.

Further, in the simulation of FIG. 7, the processing gas of 1100 sccm Arand a 400 mTorr of internal pressure of the processing container areused as simulation conditions. Further, in the simulation of FIG. 8, thefollowing simulation conditions were used: the processing gas: Ar=1100sccm and the internal pressure of the processing container: 750 mTorr.

As is evident from simulation results of FIGS. 7 and 8, when the gastransported to the intermediate position of the sidewall 22 of theprocessing container 12 through the transport hole 13-1 is made tocirculate in the injection hole 13-2, the pressure within the injectionhole 13-2 is reduced to the pressure within the processing container.That is, when the gas is made to circulate in the injection hole 13-2having a diameter larger than that of the transport hole 13-1, thepressure of the gas injected from the injection hole 13-2 may be reducedto a pressure lower than 1 Torr.

As is evident from the curve of FIG. 6 and the simulation results ofFIGS. 7 and 8, when the gas is injected from the injection hole 13-2having a diameter larger than that of the transport hole 13-1 into theprocessing space S such, it is possible to reduce the pressure of gas toa range out of the range of 1 Torr to 2 Torr at which electric dischargeis easily generated. In other words, when the gas is injected into theprocessing space S from the injection hole 13-2 having the diameterlarger than that of the transport hole 13-1, it is possible to avoid thegeneration of electric discharge that is caused by the increase of thepressure.

Descriptions will be returned back to the description of FIG. 5. Thediameter D2 of the injection hole 13-2 may be smaller than apredetermined upper limit value. Also, the predetermined upper limitvalue may be determined by using the following Equation (1).

a<Pnm/(2πf(με)^(1/2))  (1)

where, “a” is a radius of the injection hole (the predetermined upperlimit value/2), “Pnm” is a Bessel function, “f” is a frequency ofmicrowaves, “μ” is a permeability, and “ε” is a dielectric constant.

As described above, the diameter D2 of the injection hole 13-2 is madesmaller than the predetermined upper limit value determined by Equation(1) such that it becomes possible to suppress leakage of the microwavesfrom the processing space S into the injection hole 13-2.

FIG. 9 is a graph illustrating an example of simulation results of arelationship between a diameter of the injection hole and a leakage rateof microwaves in the first exemplary embodiment. In FIG. 9, a “holeradius” indicates a radius of the injection hole 13-2 corresponding tothe diameter D2 of the injection hole 13-2. Further, a “MW leak rate[%]” indicates a leakage rate that is a ratio of an intensity of themicrowaves leaked into the injection hole 13-2 to an intensity of themicrowaves input to the processing space S.

As is evident from the simulation results of FIG. 9, when the diameterD2 of the injection hole 13-2 is made smaller than the predeterminedupper limit value, the leakage rate of microwaves is improved to be lessthan 1%. Here, the predetermined upper limit value refers to apredetermined upper limit value determined by Equation (1). That is, ithas been found out that when the diameter D2 of the injection hole 13-2is made smaller than the predetermined upper limit value determined byEquation (1), it becomes possible to suppress the increase of theleakage of the microwaves from the processing space S into the injectionhole 13-2.

In the foregoing, according to the plasma processing apparatus 11 of thefirst exemplary embodiment, a gas is transported to the intermediateposition of the sidewall 22 of the processing container 12 by thetransport hole 13-1 and injected into the processing space S by theinjection hole 13-2 having the diameter larger than that of thetransport hole 13-1. As a result, according to the first exemplaryembodiment, since the pressure of the gas may be reduced to a rangeother than the range of pressure at which electric discharge is easilygenerated, it is possible to introduce the gas without generatingelectric discharge due to the increase of the pressure.

Further, according to the plasma processing apparatus 11 of the firstexemplary embodiment, since the diameter of the injection hole 13-2 ismade smaller than the predetermined upper limit value, it is possible tosuppress the increase of the leakage of the microwaves from theprocessing space S into the injection hole 13-2. As a result, accordingto the first exemplary embodiment, since the electric field intensity ofthe injection hole 13-2 or in the vicinity of the injection hole 13-2may be reduced, it is possible to prevent electric discharge from beinggenerated in the injection hole 13-2 or in the vicinity of the injectionhole 13-2.

Second Exemplary Embodiment

FIG. 10 is an enlarged cross-sectional view of the gas supply unit, thesidewall of the processing container, and a cylindrical dielectric in asecond exemplary embodiment. FIG. 11 is a front view of the gas supplyunit, the sidewall of the processing container, and the cylindricaldielectric illustrated in FIG. 10 when viewed from one end side of thecylindrical dielectric. In the meantime, since constitutional elementsin FIGS. 10 and 11, which are assigned the same reference numerals asthose in FIG. 5, have the same or substantially the same function asthose in FIG. 5 except for the features to be described below,descriptions thereof will be omitted.

As illustrated in FIG. 10 and FIG. 11, the plasma processing apparatusaccording to the second exemplary embodiment further includes acylindrical dielectric 61 embedded in the sidewall 22 of the processingcontainer 12 to surround a periphery of the injection hole 13-2 in astate where one end 61 a thereof is exposed to the processing space S.The cylindrical dielectric 61 guides the microwaves radiated into theprocessing space S by the antenna 20 from one end 61 a to the other end61 b embedded in the sidewall 22. The microwaves guided to the other end61 b by the cylindrical dielectric 61 are reflected on the other end 61b and the reflected microwaves and the microwaves before reflection arecancelled with each other. By doing this, the increase of the leakage ofthe microwaves from the processing space S into the injection hole 13-2is suppressed such that the electric field intensity in the injectionhole 13-2 or in the vicinity of the injection hole 13-2 is reduced.

When a wavelength of the microwaves propagating at an inside of thecylindrical dielectric 61 is λ, a length from one end 61 a to the otherend 61 b in the cylindrical dielectric 61 may be λ/5 or more and 3λ/5 orless. As described above, the length from one end 61 a to the other end61 b in the cylindrical dielectric 61 is set to be λ/5 or more and 3λ/5or less such that a phase of the microwaves reflected on the other end61 b is inverted and thus, it becomes possible to efficiently cancel themicrowaves which are not yet advanced into the dielectric.

FIG. 12 is a graph illustrating an example of simulation results of anelectric field intensity of the injection hole depending on whether thecylindrical dielectric is present or not in the second exemplaryembodiment. In the graph illustrated in FIG. 12, the horizontal axisindicates an electron density in the processing space S and the verticalaxis indicates a ratio of the electric field intensity of the injectionhole 13-2 for the case where the cylindrical dielectric 61 is embeddedto the electric field intensity of the injection hole 13-2 for a casewhere the cylindrical dielectric 61 is not present.

As is apparent from the simulation results of FIG. 12, in a case wherethe cylindrical dielectric 61 is embedded, the electric field intensityof the injection hole 13-2 was improved by approximately 70% as comparedwith a case where the cylindrical dielectric 61 is not present.

In the foregoing, according to the plasma processing apparatus of thesecond exemplary embodiment, since the cylindrical dielectric 61 isembedded in the sidewall 22 of the processing container 12 to surroundthe periphery of the injection hole 13-2, it is possible to suppress theincrease of the leakage of the microwaves from the processing space Sinto the injection hole 13-2. As a result, according to the secondexemplary embodiment, since the electric field intensity in theinjection hole 13-2 or in the vicinity of the injection hole 13-2 may bereduced, it is possible to introduce the gas without generating electricdischarge due to the increase of the pressure and also more efficientlyprevent electric discharge from being generated in the injection hole13-2 or in the vicinity of the injection hole 13-2.

Third Exemplary Embodiment

FIG. 13 is an enlarged cross-sectional view of the gas supply unit, thesidewall of the processing container, and a plate-shaped dielectric in athird exemplary embodiment. In the meantime, since constitutionalelements assigned the same reference numerals as those of FIG. 5 in FIG.13 have the same or substantially the same function as those in FIG. 5except for the descriptions which will be made in the following,descriptions thereof will be omitted.

As illustrated in FIG. 13, the plasma processing apparatus according tothe third exemplary embodiment further includes a plate-shapeddielectric 71 embedded in an area interposed between the injection hole13-2 and the dielectric member 16 in the sidewall 22 of the processingcontainer 12 in a state where one end 71 a thereof is exposed to theprocessing space S. More specifically, the plate-shaped dielectric 71 isannularly embedded in a recess formed along the circumferentialdirection of the sidewall 22 in the area interposed between theinjection hole 13-2 and the dielectric member 16 in the sidewall 22 ofthe processing container 12, in a state where the one end 71 a isexposed to the processing space S. The plate-shaped dielectric 71 guidesthe microwaves radiated into the processing space S by the antenna 20from one end 71 a to the other end 71 b embedded in the sidewall 22. Themicrowaves guided to the other end 71 b by the plate-shaped dielectric71 are reflected on the other end 71 b, and the reflected microwaves andthe microwaves before being reflected are cancelled with each other. Bythis, the increase of the leakage of the microwaves from the processingspace S into the injection hole 13-2 is suppressed such that theelectric field intensity in the injection hole 13-2 or in the vicinityof the injection hole 13-2 is reduced.

Assuming that the wavelength of the microwaves propagated in theplate-shaped dielectric 71 is λ, the length from one end 71 a to theother end 71 b in the plate-shaped dielectric 71 may be λ/5 or more and3λ/5 or less. As described above, when the length from one end 71 a tothe other end 71 b in the plate-shaped dielectric 71 is set to be λ/5 ormore and 3λ/5 or less, a phase of the microwaves reflected on the otherend 71 b is inverted and thus it becomes possible to efficiently cancelthe microwaves before being reflected.

In the foregoing, according to the plasma processing apparatus of thethird exemplary embodiment, since the plate-shaped dielectric 71 isembedded in the area interposed between the injection hole 13-2 and thedielectric member 16 in the sidewall 22 of the processing container 12,it is possible to suppress the increase of the leakage of the microwavesfrom the processing space S into the injection hole 13-2. As a result,according to the third exemplary embodiment, since the electric fieldintensity in the injection hole 13-2 or in the vicinity of the injectionhole 13-2 may be reduced, it is possible to introduce the gas withoutgenerating electric discharge due to the increase of the pressure andalso more efficiently prevent electric discharge from being generated inthe injection hole 13-2 or in the vicinity of the injection hole 13-2.

Fourth Exemplary Embodiment

FIG. 14 is an enlarged cross-sectional view of the gas supply unit, thesidewall of the processing container, and a plate-shaped conductor in afourth exemplary embodiment. In the meantime, since the constitutionalelements in FIG. 14, which are assigned the same reference numerals asthose of FIG. 5, have the same or substantially the same function asthose in FIG. 5 except for the features described below, descriptionsthereof will be omitted.

As illustrated in FIG. 14, the plasma processing apparatus according tothe fourth exemplary embodiment further includes a plate-shapedconductor 81 provided to protrude from an area interposed between theinjection hole 13-2 and the dielectric member 16 of the sidewall 22 ofthe processing container 12 toward the processing space S. Morespecifically, the plate-shaped conductor 81 is provided to annularlyprotrude from an area interposed between the injection hole 13-2 and thedielectric member 16 of the sidewall 22 of the processing container 12toward the processing space S. The plate-shaped conductor 81 shields themicrowaves radiated into the processing space S by the antenna 20. Bydoing this, the increase of the leakage of the microwaves from theprocessing space S into the injection hole 13-2 is suppressed such thatthe electric field intensity in the injection hole 13-2 or in thevicinity of the injection hole 13-2 is reduced.

FIG. 15 illustrates graphs representing examples of simulation resultsof an electric field intensity of the injection hole depending onwhether the plate-shaped dielectric in the third exemplary embodiment orthe plate-shaped conductor in the fourth exemplary embodiment is presentor not. In FIG. 15, the graph “STD” represents the electric fieldintensity of the injection hole 13-2 for a case where both of theplate-shaped dielectric 71 and the plate-shaped conductor 81 are notpresent. Further, the graph “Choke 2” represents the electric fieldintensity of the injection hole 13-2 for a case where the plate-shapeddielectric 71 is embedded. Further, the graph “Metal Bar” represents theelectric field intensity of the injection hole 13-2 in the case wherethe plate-shaped conductor 81 is provided to protrude. Further, in therespective graphs illustrated in FIG. 15, the horizontal axis indicatesan electron density in the processing space S and the vertical axisindicates the electric field intensity. Further, in the simulation ofFIG. 15, 3 KW of input microwave power is used as simulation condition.

As is apparent from the simulation results of FIG. 15, in a case wherethe plate-shaped dielectric 71 is embedded, the electric field intensityof the injection hole 13-2 is reduced as compared with the case whereboth of the plate-shaped dielectric 71 and the plate-shaped conductor 81are not present.

Further, as is apparent from the simulation results of FIG. 15, in acase where the plate-shaped conductor 81 is provided to protrude, theelectric field intensity of the injection hole 13-2 is reduced ascompared with the case the plate-shaped dielectric 71 is embedded. Thatis, it has been found out that the plate-shaped conductor 81 is providedto protrude such that the electric field intensity of the injection hole13-2 may be most efficiently reduced.

In the foregoing, according to the plasma processing apparatus of thefourth exemplary embodiment, since the plate-shaped conductor 81 isprovided to protrude from an area interposed between the injection hole13-2 and the dielectric member 16 of the sidewall 22 of the processingcontainer 12, it is possible to suppress the increase of the leakage ofthe microwaves from the processing space S into the injection hole 13-2.As a result, according to the fourth exemplary embodiment, since theelectric field intensity of the injection hole 13-2 or in the vicinityof the injection hole 13-2 may be reduced, it is possible to introducethe gas without generating electric discharge due to the increase ofpressure and more efficiently prevent electric discharge from beinggenerated in the injection hole 13-2 or in the vicinity of the injectionhole 13-2.

In the meantime, in the first to fourth exemplary embodiments, anexample in which the diameter D2 of the injection hole 13-2 is constantis described, but the present disclosure is not limited thereto. Forexample, the diameter D2 of the injection hole 13-2 may be increased asgoing away from the transport hole 13-1. By doing this, since it ispossible to easily inject gas from the injection hole 13-2 and reducethe pressure of the gas to a range other than the range of pressure atwhich electric discharge is easily generated, the gas may be stablyintroduced without generating the electric discharge due to the increaseof pressure.

Further, in the second exemplary embodiment, the cylindrical dielectric61 is embedded in the sidewall 22 of the processing container 12 tosurround the periphery of the injection hole 13-2 communicated to thetransport hole 13-1, but the present disclosure is not limited thereto.For example, a structure in which only an injection hole of asingle-stage is formed in the sidewall 22 of the processing container 12may also be adopted, instead of a two-stage structure including thetransport hole 13-1 and the injection hole 13-2. In the structure, thecylindrical dielectric 61 may be embedded in the sidewall 22 of theprocessing container 12 to surround a periphery of the injection hole ofthe single-stage. By doing this, even when the structure in which onlythe injection hole of the single-stage is formed in the sidewall 22 ofthe processing container 12 is adopted, it is possible to introduce gaswithout generating electric discharge due to the increase of thepressure.

Further, in the third exemplary embodiment, the plate-shaped dielectric71 is embedded in the area interposed between the injection hole 13-2communicated to the transport hole 13-1 and the dielectric member 16 inthe sidewall 22 of the processing container 12, but the presentdisclosure is not limited thereto. For example, a structure in whichonly an injection hole of a single-stage is formed in the sidewall 22 ofthe processing container 12 may also be adopted, instead of a two-stagestructure including the transport hole 13-1 and the injection hole 13-2.In the structure, the plate-shaped dielectric 71 may be embedded in thearea interposed between the injection hole of the single-stage and thedielectric member 16. By doing this, even when the structure in whichonly the injection hole of the single-stage is formed in the sidewall 22of the processing container 12 is adopted, it is possible to introducegas without generating electric discharge due to the increase of thepressure.

Further, in the fourth exemplary embodiment, the plate-shaped conductor81 is provided to protrude from the area interposed between theinjection hole 13-2 and the dielectric member 16 of the sidewall 22 ofthe processing container 12 toward the processing space S, but thepresent disclosure is not limited thereto. For example, a structure inwhich only an injection hole of a single-stage is formed in the sidewall22 of the processing container 12 may also be adopted, instead of atwo-stage structure including the transport hole 13-1 and the injectionhole 13-2. In the structure, the plate-shaped conductor 81 may beprovided to protrude from an area interposed between the injection holeof the single-stage and the dielectric member 16 toward the processingspace S. By doing this, even when the structure in which only theinjection hole of the single-stage is formed in the sidewall 22 of theprocessing container 12 is adopted, it is possible to introduce gaswithout generating electric discharge due to the increase of thepressure.

Further, in the second to fourth exemplary embodiments, the plasmaprocessing apparatuses include the cylindrical dielectric 61, theplate-shaped dielectric 71, and the plate-shaped conductor 81,respectively, but the present disclosure is not limited thereto. Forexample, the plasma processing apparatus may include at least one of thecylindrical dielectric 61, the plate-shaped dielectric 71, and theplate-shaped conductor 81.

From the foregoing, it will be appreciated that various exemplaryembodiments of the present disclosure have been described herein forpurposes of illustration, and that various modifications may be madewithout departing from the scope and spirit of the present disclosure.Accordingly, the various exemplary embodiments disclosed herein are notintended to be limiting, with the true scope and spirit being indicatedby the following claims.

What is claimed is:
 1. A plasma processing apparatus comprising: aprocessing container that defines a processing space; a gas supply pathprovided on a sidewall of the processing container, the gas supply pathbeing configured to supply a gas to the processing space; a dielectricmember having a facing surface that faces the processing space, and anantenna provided on a surface opposite to the facing surface of thedielectric member, the antenna being configured to radiate microwavesthat turn the gas into plasma to the processing space through thedielectric member, wherein the gas supply path includes: a transporthole configured to transport the gas to a position where the gas doesnot reach the processing space in the inside of the sidewall of theprocessing container, and an injection hole communicated to thetransport hole and configured to inject the gas transported to theposition into the processing space, the injection hole having a diameterlarger than that of the transport hole to introduce the gas withoutgenerating electric discharge in the injection hole or in the vicinityof the hole, wherein an entire surface the injection hole is in contactwith the processing space such that the gas is injected to theprocessing space through the entire surface of the injection hole. 2.The plasma processing apparatus according to claim 1, wherein theinjection hole has an internal wall having a substantially constantdiameter throughout the injection hole.
 3. The plasma processingapparatus according to claim 1, wherein the diameter of the injectionhole and the transport hole is determined such that a gas pressure fromthe injection hole to the processing space falls below 1 Torr.
 4. Theplasma processing apparatus of claim 1, wherein an upper limit of aradius of the injection hole is determined to be smaller thanPnm/(2πf(με)^(1/2)) where “Pnm” is a Bessel function, “f” is a frequencyof microwaves, “μ” is a permeability, and “ε” is a dielectric constant.5. The plasma processing apparatus according to claim 1, wherein thetransport hole and the injection hole are embedded in the sidewall ofthe processing container, and the transport hole has a shape thatincreases a gas pressure toward a connection point between the transporthole and the injection hole.
 6. The plasma processing apparatusaccording to claim 1, further comprising a cylindrical dielectricembedded in the sidewall of the processing container to surround aperiphery of the injection hole in a state where one end of thecylindrical dielectric is exposed to the processing space to guide themicrowaves radiated into the processing space by the antenna from oneend to the other end of the cylindrical dielectric.
 7. The plasmaprocessing apparatus according to claim 6, wherein a length from the oneend to the other end of the cylindrical dielectric is between λ/5 and3λ/5 where λ is a wavelength of the microwaves radiated from an innerside of the cylindrical dielectric.